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BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
Rev. 01 -- 10 August 2006 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.
1.2 Features
I TrenchMOS technology I 175 C rated I Q101 compliant I Standard level compatible
1.3 Applications
I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V, 24 V and 42 V loads
1.4 Quick reference data
I EDS(AL)S 630 mJ I ID 100 A I RDSon = 3.7 m (typ) I Ptot 333 W
2. Pinning information
Table 1. Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain
mb mb
D
Simplified outline
Symbol
G
mbb076
S
123 123
SOT78 (TO-220AB)
SOT226 (I2PAK)
Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information Package Name BUK754R3-75C BUK7E4R3-75C SC-46 I2PAK Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226
4. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage drain-gate voltage (DC) gate-source voltage drain current VGS = 10 V; see Figure 2 and 3 limited by power dissipation at Tmb = 25 C limited by package at Tmb = 25 C limited by package at Tmb = 100 C IDM Ptot Tstg Tj IDR peak drain current total power dissipation storage temperature junction temperature reverse drain current Tmb = 25 C limited by power dissipation limited by package IDRM peak reverse drain current Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 100 A; VDS 75 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 C
[4] [1] [2] [3] [1] [2] [3] [3]
Conditions RGS = 20 k
Min -55 -55
Max 75 75 20 192 100 100 769 333 +175 +175
Unit V V V A A A A W C C
Tmb = 25 C; pulsed; tp 10 s; see Figure 3 Tmb = 25 C; see Figure 1
Source-drain diode 192 100 769 630 A A A mJ mJ
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy
[1] [2] [3] [4] Refer to document 9397 750 12572 for further information. Current is limited by chip power dissipation rating. Continuous current is limited by package. Conditions: a) Maximum value not quoted. Repetitive rating defined in Figure 16. b) Single-pulse avalanche rating limited by Tj(max) of 175 C. c) Repetitive avalanche rating limited by an average junction temperature of 170 C. d) Refer to application note AN10273 for further information.
BUK75_7E4R3-75C_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2006
2 of 13
Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
120 Pder (%) 80
03aa16
200 ID (A) 150
003aab376
100
(1)
40
50
0 0 50 100 150 Tmb (C) 200
0 0 50 100 150 Tmb (C) 200
P tot P der = ----------------------- x 100 % P tot ( 25C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature
103 ID (A) 102
(1)
VGS 10 V (1) Capped at 100 A due to package.
Fig 2. Continuous drain current as a function of mounting base temperature
003aab393
Limit RDSon = VDS / ID
tp = 10 s
10
100 s 1 ms 10 ms
1
100 ms
DC
10-1 10-1
1
10
VDS (V)
102
Tmb = 25 C; IDM is single pulse. (1) Capped at 100 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK75_7E4R3-75C_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2006
3 of 13
Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient SOT78 SOT226 vertical in free air vertical in free air 60 50 K/W K/W Conditions Min Typ Max 0.45 Unit K/W
1 Zth(j-mb) (K/W) 10-1
0.1 0.05 0.02
003aab340
= 0.5
0.2
10-2
P
=
tp T
single shot
tp T
t
10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK75_7E4R3-75C_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2006
4 of 13
Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 250 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain leakage current VDS = 75 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 25 A; see Figure 6 and 8 Tj = 25 C Tj = 175 C Dynamic characteristics QG(tot) QGS QGD VGS(pl) Ciss Coss Crss td(on) tr td(off) tf LD total gate charge gate-source charge gate-drain charge gate-source plateau voltage input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance from drain lead 6 mm from package to center of die from contact screw on mounting base to center of die from upper edge of drain mounting base to center of die SOT226 LS internal source inductance from source lead to source bonding pad VDS = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 12 ID = 25 A; VDD = 60 V; VGS = 10 V; see Figure 14 142 36 67 5 923 579 61 100 194 90 4.5 3.5 2.5 7.5 1108 793 nC nC nC V pF pF ns ns ns ns nH nH nH nH 3.7 4.3 9 m m 0.02 2 1 500 100 A A nA 2 1 3 4 4.4 V V V 75 70 V V Min Typ Max Unit Static characteristics
8744 11659 pF
BUK75_7E4R3-75C_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2006
5 of 13
Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
Table 5. Characteristics ...continued Tj = 25 C unless otherwise specified. Symbol VSD trr Qr Parameter source-drain voltage reverse recovery time recovered charge Conditions IS = 25 A; VGS = 0 V; see Figure 15 IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VR = 25 V Min Typ 0.85 83 155 Max 1.2 Unit V ns nC Source-drain diode
200 ID (A) 8 150 6 20
003aab377
12 RDSon (m) 10
003aab378
8 5.5 100 6 50
5 VGS (V) = 4.5
4
0 0 2 4 6 8 VDS (V) 10
2 5 10 15 VGS (V) 20
Tj = 25 C
Tj = 25 C; ID = 25 A
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values
8 RDSon (m) 6
003aab379
Fig 6. Drain source on-state resistance as a function of gate-source voltage; typical values
2.4 a
03aa28
VGS (V) = 5.5 6
1.8
1.2 8 4 10 0.6 20
2 0 70 140 ID (A) 210
0 -60
0
60
120
Tj (C)
180
ID = 1 mA; VDS = VGS
R DSon a = ----------------------------R DSon ( 25C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Fig 7. Drain-source on-state resistance as a function of drain current; typical values
BUK75_7E4R3-75C_1
Product data sheet
Rev. 01 -- 10 August 2006
6 of 13
Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2 min typ max
03aa35
3
typ
10-3
2
min
10-4
1
10-5
0 -60
0
60
120 Tj (C)
180
10-6 0 2 4 VGS (V) 6
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of junction temperature
180 gfs (S) 120
003aab380
Fig 10. Sub-threshold drain current as a function of gate-source voltage
16000 C (pF) Ciss 12000
003aab381
8000
Coss
60 4000 Crss
0 0 75 150 ID (A) 225
0 10-1
1
10
VDS (V)
102
Tj = 25 C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK75_7E4R3-75C_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2006
7 of 13
Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
200
003aab382
10 VGS (V) 8
003aab383
VDS = 14 V
ID (A)
VDS = 60 V 6 100 Tj = 25 C 4
Tj = 175 C 0 0 2 4 6 VGS (V) 8
2
0 0 50 100 150 QG (nC) 200
VDS = 25 V
Tj = 25 C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values
250 IS (A) 200
003aab384
Fig 14. Gate-source voltage as a function of gate charge; typical values
103 IAL (A) 102
003aab385
150
(1)
100 10 Tj = 175 C 50 Tj = 25 C 1 10-3
(2)
(3)
0 0 0.5 1 1.5 VSD (V) 2
10-2
10-1
1
tAL (ms)
10
VGS = 0 V
See Table note 4 of Table 3 "Limiting values". (1) Single-pulse; Tj = 25 C. (2) Single-pulse; Tj = 150 C. (3) Repetitive.
Fig 15. Source current as a function of source-drain voltage; typical values
Fig 16. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK75_7E4R3-75C_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2006
8 of 13
Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1
L2 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1 1.45 1.00 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1 3.30 2.79 L2 max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2
OUTLINE VERSION SOT78
REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46
EUROPEAN PROJECTION
ISSUE DATE 05-03-22 05-10-25
Fig 17. Package outline SOT78 (TO-220AB)
BUK75_7E4R3-75C_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2006
9 of 13
Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
SOT226
A D1 E A1
mounting base D
L1 Q b1 L
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.40 1.27 b 0.85 0.60 b1 1.3 1.0 c 0.7 0.4 D max 11 D1 1.6 1.2 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 Q 2.6 2.2
OUTLINE VERSION SOT226
REFERENCES IEC JEDEC low-profile 3-lead TO-220AB JEITA
EUROPEAN PROJECTION
ISSUE DATE 05-06-23 06-02-14
Fig 18. Package outline SOT226 (I2PAK)
BUK75_7E4R3-75C_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2006
10 of 13
Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
8. Revision history
Table 6. Revision history Release date 20060810 Data sheet status Product data sheet Change notice Supersedes Document ID BUK75_7E4R3-75C_1
BUK75_7E4R3-75C_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2006
11 of 13
Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
9.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
10. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
BUK75_7E4R3-75C_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2006
12 of 13
Philips Semiconductors
BUK754R3-75C; BUK7E4R3-75C
N-channel TrenchMOS standard level FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 10 August 2006 Document identifier: BUK75_7E4R3-75C_1

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